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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666315912";s:16:"background_image";s:59:"/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg";s:4:"href";s:15:"/en/about1.html";s:5:"title";s:8:"About us";}i:2;a:26:{s:2:"id";i:65;s:4:"name";s:11:"Consulation";s:3:"lan";s:2:"en";s:7:"en_name";s:4:"cpzx";s:4:"path";s:4:",56,";s:4:"p_id";i:56;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"cpzx";s:15:"detail_template";s:4:"cpzx";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg";s:7:"summary";s:20:"Product consultation";s:14:"detail_content";s:508:"Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929203";s:16:"background_image";s:0:"";s:4:"href";s:13:"/en/cpzx.html";s:5:"title";s:11:"Consulation";}i:3;a:26:{s:2:"id";i:66;s:4:"name";s:20:"Graduate Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"yjjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:5:"byszp";s:15:"detail_template";s:5:"byszp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:3;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766952";s:16:"background_image";s:59:"/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg";s:4:"href";s:14:"/en/yjjob.html";s:5:"title";s:20:"Graduate Recruitment";}i:4;a:26:{s:2:"id";i:68;s:4:"name";s:9:"4H n-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product1";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product1";s:15:"detail_template";s:8:"product1";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult.  SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc.  Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier.  Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929164";s:16:"background_image";s:0:"";s:4:"href";s:15:"/en/tzzgx1.html";s:5:"title";s:9:"Investors";}i:12;a:26:{s:2:"id";i:67;s:4:"name";s:18:"Social Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"shjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"shzp";s:15:"detail_template";s:4:"shzp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766944";s:16:"background_image";s:59:"/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg";s:4:"href";s:14:"/en/shjob.html";s:5:"title";s:18:"Social Recruitment";}i:13;a:26:{s:2:"id";i:69;s:4:"name";s:23:"4H Semi-Insulating-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product2";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product2";s:15:"detail_template";s:8:"product2";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm)   2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality  3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control  4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack.  5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices.  6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process  Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape.  Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices.  The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it.  As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications.  The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation.  Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult.  The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals.  The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry.  P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". 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SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. 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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666315912";s:16:"background_image";s:59:"/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg";s:4:"href";s:15:"/en/about1.html";s:5:"title";s:8:"About us";}i:2;a:26:{s:2:"id";i:65;s:4:"name";s:11:"Consulation";s:3:"lan";s:2:"en";s:7:"en_name";s:4:"cpzx";s:4:"path";s:4:",56,";s:4:"p_id";i:56;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"cpzx";s:15:"detail_template";s:4:"cpzx";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg";s:7:"summary";s:20:"Product consultation";s:14:"detail_content";s:508:"Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929203";s:16:"background_image";s:0:"";s:4:"href";s:13:"/en/cpzx.html";s:5:"title";s:11:"Consulation";}i:3;a:26:{s:2:"id";i:66;s:4:"name";s:20:"Graduate Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"yjjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:5:"byszp";s:15:"detail_template";s:5:"byszp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:3;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766952";s:16:"background_image";s:59:"/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg";s:4:"href";s:14:"/en/yjjob.html";s:5:"title";s:20:"Graduate Recruitment";}i:4;a:26:{s:2:"id";i:68;s:4:"name";s:9:"4H n-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product1";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product1";s:15:"detail_template";s:8:"product1";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult. SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc. Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier. Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929164";s:16:"background_image";s:0:"";s:4:"href";s:15:"/en/tzzgx1.html";s:5:"title";s:9:"Investors";}i:12;a:26:{s:2:"id";i:67;s:4:"name";s:18:"Social Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"shjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"shzp";s:15:"detail_template";s:4:"shzp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766944";s:16:"background_image";s:59:"/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg";s:4:"href";s:14:"/en/shjob.html";s:5:"title";s:18:"Social Recruitment";}i:13;a:26:{s:2:"id";i:69;s:4:"name";s:23:"4H Semi-Insulating-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product2";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product2";s:15:"detail_template";s:8:"product2";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm) 2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality 3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control 4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack. 5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices. 6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape. Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices. The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it. As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications. The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation. Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult. The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals. The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry. P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". 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SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. 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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666315912";s:16:"background_image";s:59:"/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg";s:4:"href";s:15:"/en/about1.html";s:5:"title";s:8:"About us";}i:2;a:26:{s:2:"id";i:65;s:4:"name";s:11:"Consulation";s:3:"lan";s:2:"en";s:7:"en_name";s:4:"cpzx";s:4:"path";s:4:",56,";s:4:"p_id";i:56;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"cpzx";s:15:"detail_template";s:4:"cpzx";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg";s:7:"summary";s:20:"Product consultation";s:14:"detail_content";s:508:"Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929203";s:16:"background_image";s:0:"";s:4:"href";s:13:"/en/cpzx.html";s:5:"title";s:11:"Consulation";}i:3;a:26:{s:2:"id";i:66;s:4:"name";s:20:"Graduate Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"yjjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:5:"byszp";s:15:"detail_template";s:5:"byszp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:0;s:8:"listsize";i:3;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766952";s:16:"background_image";s:59:"/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg";s:4:"href";s:14:"/en/yjjob.html";s:5:"title";s:20:"Graduate Recruitment";}i:4;a:26:{s:2:"id";i:68;s:4:"name";s:9:"4H n-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product1";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product1";s:15:"detail_template";s:8:"product1";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult. SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc. Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier. Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:1;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1678929164";s:16:"background_image";s:0:"";s:4:"href";s:15:"/en/tzzgx1.html";s:5:"title";s:9:"Investors";}i:12;a:26:{s:2:"id";i:67;s:4:"name";s:18:"Social Recruitment";s:3:"lan";s:2:"en";s:7:"en_name";s:5:"shjob";s:4:"path";s:4:",57,";s:4:"p_id";i:57;s:4:"type";s:7:"article";s:4:"flag";s:7:"article";s:6:"status";s:4:"open";s:13:"list_template";s:4:"shzp";s:15:"detail_template";s:4:"shzp";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg";s:7:"summary";s:10:"Recruiting";s:14:"detail_content";s:0:"";s:9:"seo_title";s:0:"";s:11:"seo_keyword";s:0:"";s:15:"seo_description";s:0:"";s:4:"sort";i:1;s:8:"listsize";i:10;s:10:"created_at";s:10:"1641639555";s:10:"updated_at";s:10:"1666766944";s:16:"background_image";s:59:"/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg";s:4:"href";s:14:"/en/shjob.html";s:5:"title";s:18:"Social Recruitment";}i:13;a:26:{s:2:"id";i:69;s:4:"name";s:23:"4H Semi-Insulating-Type";s:3:"lan";s:2:"en";s:7:"en_name";s:8:"product2";s:4:"path";s:4:",53,";s:4:"p_id";i:53;s:4:"type";s:7:"article";s:4:"flag";s:7:"product";s:6:"status";s:4:"open";s:13:"list_template";s:8:"product2";s:15:"detail_template";s:8:"product2";s:14:"cover_template";s:0:"";s:12:"detail_title";s:0:"";s:9:"thumbnail";s:59:"/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg";s:7:"summary";s:0:"";s:14:"detail_content";s:5379:" The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm) 2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality 3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control 4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack. 5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices. 6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape. Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices. The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it. As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications. The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation. Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult. The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals. The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry. P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". 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SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. 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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666315912', 'background_image' => '/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg', 'href' => '/en/about1.html', 'title' => 'About us'), array('id' => 65, 'name' => 'Consulation', 'lan' => 'en', 'en_name' => 'cpzx', 'path' => ',56,', 'p_id' => 56, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'cpzx', 'detail_template' => 'cpzx', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg', 'summary' => 'Product consultation', 'detail_content' => 'Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929203', 'background_image' => '', 'href' => '/en/cpzx.html', 'title' => 'Consulation'), array('id' => 66, 'name' => 'Graduate Recruitment', 'lan' => 'en', 'en_name' => 'yjjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'byszp', 'detail_template' => 'byszp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 3, 'created_at' => '1641639555', 'updated_at' => '1666766952', 'background_image' => '/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg', 'href' => '/en/yjjob.html', 'title' => 'Graduate Recruitment'), array('id' => 68, 'name' => '4H n-Type', 'lan' => 'en', 'en_name' => 'product1', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product1', 'detail_template' => 'product1', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg', 'summary' => '', 'detail_content' => ' N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult. SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc. Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier. Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929164', 'background_image' => '', 'href' => '/en/tzzgx1.html', 'title' => 'Investors'), array('id' => 67, 'name' => 'Social Recruitment', 'lan' => 'en', 'en_name' => 'shjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'shzp', 'detail_template' => 'shzp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666766944', 'background_image' => '/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg', 'href' => '/en/shjob.html', 'title' => 'Social Recruitment'), array('id' => 69, 'name' => '4H Semi-Insulating-Type', 'lan' => 'en', 'en_name' => 'product2', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product2', 'detail_template' => 'product2', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg', 'summary' => '', 'detail_content' => ' The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm) 2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality 3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control 4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack. 5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices. 6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape. Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices. The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it. As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications. The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation. Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult. The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals. The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry. P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". The three-dimensional corner cut design of the letters highlights crystal element and three-dimensional sense, representing the company\'s pursuit of advanced quality and sustainable development.', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1642557184', 'background_image' => '/upload/image/VykV9XzLCXQQsl3qHcesfVacVswUY58EY3P514xc.jpeg', 'href' => '/en/ppwh.html', 'title' => 'Brand and Culture'), array('id' => 75, 'name' => 'Investor Contact', 'lan' => 'en', 'en_name' => 'gsgl', 'path' => ',54,', 'p_id' => 54, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'investorContact', 'detail_template' => 'investorContact', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/qe4oT5c0DOgWQQKGCYMNSAUaasPsQbKvstR810Id.jpeg', 'summary' => 'Corporate Governance', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1754902725', 'background_image' => '/upload/image/5I4VXJWEEjLqDrwLxtvQnr2bW2pTy4Ozaa43mgol.jpeg', 'href' => '/en/gsgl.html', 'title' => 'Investor Contact'), array('id' => 85, 'name' => 'Knowledge Center', 'lan' => 'en', 'en_name' => 'Knowledgeen', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'knowledge', 'detail_template' => 'knowledge', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/YT5tQiDnKFejlxf02EEjIuRQteRHvWlccI5i6fin.jpeg', 'summary' => '', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 12, 'created_at' => '1668582596', 'updated_at' => '1776844933', 'background_image' => '', 'href' => '/en/Knowledgeen.html', 'title' => 'Knowledge Center'), array('id' => 55, 'name' => 'Sustainability', 'lan' => 'en', 'en_name' => 'qyshzr', 'path' => '', 'p_id' => 0, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'qyshzr', 'detail_template' => 'qyshzr', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/LzMOoLbbcYQokOaAOZl7fMrGdxWOLoqdIU3Zxhv6.jpeg', 'summary' => 'Sustainability', 'detail_content' => ' Web content is being updated', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 4, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1668582662', 'background_image' => '', 'href' => '/en/qyshzr.html', 'title' => 'Sustainability'), array('id' => 62, 'name' => 'History', 'lan' => 'en', 'en_name' => 'fzlc', 'path' => ',51,', 'p_id' => 51, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'fzlc', 'detail_template' => 'fzlc', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/GUSM7bN7zZGWnqCp3x9c5XM6OVMdFyl9yepZRteu.jpeg', 'summary' => 'Histroy', 'detail_content' => ' 2025 Listed on the Main Board of the Hong Kong Stock Exchange Global debut of a full product series of 12-inch SiC substrates Awarded the International Gold Award for Semiconductors (Electronic Materials Category) 2024 World\'s First 12-Inch Silicon Carbide Substrate Launched Liquid-Phase P-Type Silicon Carbide Substrates 2023 Product delivery started in Shanghai Plant 2022 IPO on the STAR Market (688234) Successful development of 8-inch products Awarded as a National Model Enterprise of Intellectual Property 2021 Named National Champion Enterprise of Manufacturing Industry 2020 First Prize of Shandong Provincial Science and Technology Progress 2019 The global market share of S.I. SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. 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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666315912', 'background_image' => '/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg', 'href' => '/en/about1.html', 'title' => 'About us'), array('id' => 65, 'name' => 'Consulation', 'lan' => 'en', 'en_name' => 'cpzx', 'path' => ',56,', 'p_id' => 56, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'cpzx', 'detail_template' => 'cpzx', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg', 'summary' => 'Product consultation', 'detail_content' => 'Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929203', 'background_image' => '', 'href' => '/en/cpzx.html', 'title' => 'Consulation'), array('id' => 66, 'name' => 'Graduate Recruitment', 'lan' => 'en', 'en_name' => 'yjjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'byszp', 'detail_template' => 'byszp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 3, 'created_at' => '1641639555', 'updated_at' => '1666766952', 'background_image' => '/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg', 'href' => '/en/yjjob.html', 'title' => 'Graduate Recruitment'), array('id' => 68, 'name' => '4H n-Type', 'lan' => 'en', 'en_name' => 'product1', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product1', 'detail_template' => 'product1', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg', 'summary' => '', 'detail_content' => ' N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult. SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc. Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier. Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929164', 'background_image' => '', 'href' => '/en/tzzgx1.html', 'title' => 'Investors'), array('id' => 67, 'name' => 'Social Recruitment', 'lan' => 'en', 'en_name' => 'shjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'shzp', 'detail_template' => 'shzp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666766944', 'background_image' => '/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg', 'href' => '/en/shjob.html', 'title' => 'Social Recruitment'), array('id' => 69, 'name' => '4H Semi-Insulating-Type', 'lan' => 'en', 'en_name' => 'product2', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product2', 'detail_template' => 'product2', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg', 'summary' => '', 'detail_content' => ' The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm) 2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality 3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control 4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack. 5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices. 6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape. Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices. The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it. As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications. The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation. Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult. The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals. The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry. P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". The three-dimensional corner cut design of the letters highlights crystal element and three-dimensional sense, representing the company\'s pursuit of advanced quality and sustainable development.', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1642557184', 'background_image' => '/upload/image/VykV9XzLCXQQsl3qHcesfVacVswUY58EY3P514xc.jpeg', 'href' => '/en/ppwh.html', 'title' => 'Brand and Culture'), array('id' => 75, 'name' => 'Investor Contact', 'lan' => 'en', 'en_name' => 'gsgl', 'path' => ',54,', 'p_id' => 54, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'investorContact', 'detail_template' => 'investorContact', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/qe4oT5c0DOgWQQKGCYMNSAUaasPsQbKvstR810Id.jpeg', 'summary' => 'Corporate Governance', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1754902725', 'background_image' => '/upload/image/5I4VXJWEEjLqDrwLxtvQnr2bW2pTy4Ozaa43mgol.jpeg', 'href' => '/en/gsgl.html', 'title' => 'Investor Contact'), array('id' => 85, 'name' => 'Knowledge Center', 'lan' => 'en', 'en_name' => 'Knowledgeen', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'knowledge', 'detail_template' => 'knowledge', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/YT5tQiDnKFejlxf02EEjIuRQteRHvWlccI5i6fin.jpeg', 'summary' => '', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 12, 'created_at' => '1668582596', 'updated_at' => '1776844933', 'background_image' => '', 'href' => '/en/Knowledgeen.html', 'title' => 'Knowledge Center'), array('id' => 55, 'name' => 'Sustainability', 'lan' => 'en', 'en_name' => 'qyshzr', 'path' => '', 'p_id' => 0, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'qyshzr', 'detail_template' => 'qyshzr', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/LzMOoLbbcYQokOaAOZl7fMrGdxWOLoqdIU3Zxhv6.jpeg', 'summary' => 'Sustainability', 'detail_content' => ' Web content is being updated', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 4, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1668582662', 'background_image' => '', 'href' => '/en/qyshzr.html', 'title' => 'Sustainability'), array('id' => 62, 'name' => 'History', 'lan' => 'en', 'en_name' => 'fzlc', 'path' => ',51,', 'p_id' => 51, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'fzlc', 'detail_template' => 'fzlc', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/GUSM7bN7zZGWnqCp3x9c5XM6OVMdFyl9yepZRteu.jpeg', 'summary' => 'Histroy', 'detail_content' => ' 2025 Listed on the Main Board of the Hong Kong Stock Exchange Global debut of a full product series of 12-inch SiC substrates Awarded the International Gold Award for Semiconductors (Electronic Materials Category) 2024 World\'s First 12-Inch Silicon Carbide Substrate Launched Liquid-Phase P-Type Silicon Carbide Substrates 2023 Product delivery started in Shanghai Plant 2022 IPO on the STAR Market (688234) Successful development of 8-inch products Awarded as a National Model Enterprise of Intellectual Property 2021 Named National Champion Enterprise of Manufacturing Industry 2020 First Prize of Shandong Provincial Science and Technology Progress 2019 The global market share of S.I. SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 5, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1668582662', 'background_image' => '', 'href' => '/en/contact.html', 'title' => 'Contact us'), array('id' => 63, 'name' => 'Locations', 'lan' => 'en', 'en_name' => 'ghbj', 'path' => ',51,', 'p_id' => 51, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'ghbj', 'detail_template' => 'ghbj', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/jq0BXpPycWLAz0dbo3GenINmHdPcirUH0zgpXNjL.jpeg', 'summary' => 'Layout', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 5, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1685085022', 'background_image' => '/upload/image/EL5lKr9C82ZPvcmcipLO9N4tZiHrtvrZOvTBHQZQ.jpeg', 'href' => '/en/ghbj.html', 'title' => 'Locations'), array('id' => 57, 'name' => 'Recruiting', 'lan' => 'en', 'en_name' => 'zxns', 'path' => '', 'p_id' => 0, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'job', 'detail_template' => 'job', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/VuvvYnGyv0O2KhAdUvNAWBlqUeWP6QB6QQBN2JjN.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 6, 'listsize' => 2, 'created_at' => '1641639555', 'updated_at' => '1668582662', 'background_image' => '', 'href' => '/en/zxns.html', 'title' => 'Recruiting')))in Repository.php line 267 | |||||||||||||||||||||||||
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SICC was founded in 2010. It is a technologicalcompany focusing on the R&D, production and sales of silicon carbide (SiC)substrate material. With the business philosophy of Technology ·Quality · Sustainability, SICC attaches importance to product and servicequality, takes meeting customer needs and helping customers solve problems asits work orientation. SICC actively expands the market and pursues sustainablebusiness development while mastering the process technology independently. The SiC Single Crystal Substrate is a widebandgap semiconductor material. Compared with traditional materials, it hasbetter physical properties and can effectively improve the power density andoverall performance of devices. It can be widely used in fields of powerelectronics and microwave electronics. But what behind the superior physicalproperties are sophisticated and complex preparation processes. The SiC signalcrystal grows in an enclosed environment with high temperature and low pressure.Any slight change in the environment may cause lattice disorder, which willaffect the crystal quality. Relying on the experience of industrialization andthe R&D team, SICC keeps paying attention to technology leading and qualityimproving, and insists on continuous innovation. SICC will build integratedsolutions to improve service and product, and strives to become aninternational famous company of semiconductor materials. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666315912', 'background_image' => '/upload/image/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg', 'href' => '/en/about1.html', 'title' => 'About us'), array('id' => 65, 'name' => 'Consulation', 'lan' => 'en', 'en_name' => 'cpzx', 'path' => ',56,', 'p_id' => 56, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'cpzx', 'detail_template' => 'cpzx', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg', 'summary' => 'Product consultation', 'detail_content' => 'Product consultationContact: Sales DepartmentTel: 0531-85978212 Fax: 0531-85978212 Email: sales@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Investor RelationsContact: Office of the Board of DirectorsTel: 0531-69900616 Fax: 0531-85978212 Email: dmo@sicc.cc Address: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929203', 'background_image' => '', 'href' => '/en/cpzx.html', 'title' => 'Consulation'), array('id' => 66, 'name' => 'Graduate Recruitment', 'lan' => 'en', 'en_name' => 'yjjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'byszp', 'detail_template' => 'byszp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/cgN2KkqEtPp66V3VWrm5YS4qY4LBZIgem0k9W7vn.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 0, 'listsize' => 3, 'created_at' => '1641639555', 'updated_at' => '1666766952', 'background_image' => '/upload/image/UWQ65frIf2MSwrk3b7za71EveCbK3FuU7GJWjaEC.jpeg', 'href' => '/en/yjjob.html', 'title' => 'Graduate Recruitment'), array('id' => 68, 'name' => '4H n-Type', 'lan' => 'en', 'en_name' => 'product1', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product1', 'detail_template' => 'product1', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg', 'summary' => '', 'detail_content' => ' N-type SiC substrate materials are primarily used for homoepitaxial growth in the fabrication of power semiconductor devices. They are widely applied in new energy sectors such as electric vehicles, as well as in photovoltaic and wind power generation. Currently, SICC\'s 6-inch and 8-inch products are consistently delivered to global customers for volume production, while also possessing the capability to produce 12-inchsubstrate products. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
What is Silicon Carbide Compared with traditional materials, silicon carbide has excellent physical properties, which can reduce weight and improve efficiency for discrete devices, modules and even systems SiC Si（silicon）+C（carbon）=SiC Silicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, and its hardness is second only to diamond. This semiconductor material has great development potential, but is hard and brittle. The preparation process is complex and the processing is difficult. SiC Features Excellent physical properties Wide bandgap (High temperature resistance)1High critical breakdown field(High voltage resistance2 High thermal conductivity(Heat dissipation)3 Saturated electron drift velocity(High switching speed)4
1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. The bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 ℃. 2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. It determines the voltage resistance of a material. The critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. 3.Heat is one of the main reasons affecting the lifetime of devices. The thermal conductivity represents the material\'s ability to conduct heat. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. 4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials. It determines the switching frequency of devices. The saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency. SiC ApplicationsPower Electronics DevicesSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.The main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc. Microwave CommunicationSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.Silicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier. Directors, Supervisors and Senior Management 董事
监事
高级管理人员
Our mission To achieve greater profits for shareholders Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. ', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 1, 'created_at' => '1641639555', 'updated_at' => '1678929164', 'background_image' => '', 'href' => '/en/tzzgx1.html', 'title' => 'Investors'), array('id' => 67, 'name' => 'Social Recruitment', 'lan' => 'en', 'en_name' => 'shjob', 'path' => ',57,', 'p_id' => 57, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'shzp', 'detail_template' => 'shzp', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/fNgKkSa8vwWJLj1DC04EEkwDHRDXt1ude6lMtfE3.jpeg', 'summary' => 'Recruiting', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 1, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1666766944', 'background_image' => '/upload/image/JdtJuL1VHkZx7yve5aOxi8352Dm6hTPORVHHPZK4.jpeg', 'href' => '/en/shjob.html', 'title' => 'Social Recruitment'), array('id' => 69, 'name' => '4H Semi-Insulating-Type', 'lan' => 'en', 'en_name' => 'product2', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'product2', 'detail_template' => 'product2', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg', 'summary' => '', 'detail_content' => ' The Semi-insulating SiC substrates have high resistivity and are mainly used for GaN heteroepitaxy. The RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power Rf output of GaN in high-frequency range, and are widely applied in the new generation communication field such as the 5G stations. Semi-insulating Sic substrate materials also exhibit excellent optical properties. The 12-inch substrates show promising application prospects in optical and wearable electronics, such as AR glasses. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
Production Process of SiC Single Crystal Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy. SICC independently own the whole process from SiC powder to crystal growth and wafering. 1. SiC PowderSi+C=SiCPowder Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1 SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high (Impurity content＜0.5ppm) 2. Seed As the base of crystal growth, it provides the basic lattice structure for crystal growth It is also the core raw material for crystal quality 3. Crystal GrowthPhysical Vapor Transport（PVT） The raw materials are heated, and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control 4. Slicing SiC is a hard and brittle material whose hardness is second only to diamond Therefore, it takes long time for slicing, and is easy to crack. 5. Lapping•PolishingMP·CMP Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices. 6. Cleaning • Inspection To remove residual particles and metal impurities in the wafering processes The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality It helps to trace for the downstream process Approaching SiC | The Principle of Silicon Carbide Crystal GrowthIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields. Different crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape. Silicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices. The Crystal Structure of SiCSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond. Both Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it. As a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of "ABCB" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications. The growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation. Preparation Method of SiC: Physical Vapor Transport Method (PVT)At present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)，High Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production. During PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled. However, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult. The Main Mechanism to Grow Single Crystal: Step Flow GrowthIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals. The growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry. P-type SiC substrate materials are mainly used for homoepitaxy and the fabrication of ultrahighvoltage powersemiconductor devices. They are widely applied in smart grids represented by ultrahighvoltage power transmission, as well as in rail transit and industrial highpower power supply fields. Specifications 6-inch
Specifications 8-inch
Specifications 12-inch
SiC represents silicon carbide substrate, and C is short for "company". The three-dimensional corner cut design of the letters highlights crystal element and three-dimensional sense, representing the company\'s pursuit of advanced quality and sustainable development.', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1642557184', 'background_image' => '/upload/image/VykV9XzLCXQQsl3qHcesfVacVswUY58EY3P514xc.jpeg', 'href' => '/en/ppwh.html', 'title' => 'Brand and Culture'), array('id' => 75, 'name' => 'Investor Contact', 'lan' => 'en', 'en_name' => 'gsgl', 'path' => ',54,', 'p_id' => 54, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'investorContact', 'detail_template' => 'investorContact', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/qe4oT5c0DOgWQQKGCYMNSAUaasPsQbKvstR810Id.jpeg', 'summary' => 'Corporate Governance', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1754902725', 'background_image' => '/upload/image/5I4VXJWEEjLqDrwLxtvQnr2bW2pTy4Ozaa43mgol.jpeg', 'href' => '/en/gsgl.html', 'title' => 'Investor Contact'), array('id' => 85, 'name' => 'Knowledge Center', 'lan' => 'en', 'en_name' => 'Knowledgeen', 'path' => ',53,', 'p_id' => 53, 'type' => 'article', 'flag' => 'product', 'status' => 'open', 'list_template' => 'knowledge', 'detail_template' => 'knowledge', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/YT5tQiDnKFejlxf02EEjIuRQteRHvWlccI5i6fin.jpeg', 'summary' => '', 'detail_content' => '', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 3, 'listsize' => 12, 'created_at' => '1668582596', 'updated_at' => '1776844933', 'background_image' => '', 'href' => '/en/Knowledgeen.html', 'title' => 'Knowledge Center'), array('id' => 55, 'name' => 'Sustainability', 'lan' => 'en', 'en_name' => 'qyshzr', 'path' => '', 'p_id' => 0, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'qyshzr', 'detail_template' => 'qyshzr', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/LzMOoLbbcYQokOaAOZl7fMrGdxWOLoqdIU3Zxhv6.jpeg', 'summary' => 'Sustainability', 'detail_content' => ' Web content is being updated', 'seo_title' => '', 'seo_keyword' => '', 'seo_description' => '', 'sort' => 4, 'listsize' => 10, 'created_at' => '1641639555', 'updated_at' => '1668582662', 'background_image' => '', 'href' => '/en/qyshzr.html', 'title' => 'Sustainability'), array('id' => 62, 'name' => 'History', 'lan' => 'en', 'en_name' => 'fzlc', 'path' => ',51,', 'p_id' => 51, 'type' => 'article', 'flag' => 'article', 'status' => 'open', 'list_template' => 'fzlc', 'detail_template' => 'fzlc', 'cover_template' => '', 'detail_title' => '', 'thumbnail' => '/upload/image/GUSM7bN7zZGWnqCp3x9c5XM6OVMdFyl9yepZRteu.jpeg', 'summary' => 'Histroy', 'detail_content' => ' 2025 Listed on the Main Board of the Hong Kong Stock Exchange Global debut of a full product series of 12-inch SiC substrates Awarded the International Gold Award for Semiconductors (Electronic Materials Category) 2024 World\'s First 12-Inch Silicon Carbide Substrate Launched Liquid-Phase P-Type Silicon Carbide Substrates 2023 Product delivery started in Shanghai Plant 2022 IPO on the STAR Market (688234) Successful development of 8-inch products Awarded as a National Model Enterprise of Intellectual Property 2021 Named National Champion Enterprise of Manufacturing Industry 2020 First Prize of Shandong Provincial Science and Technology Progress 2019 The global market share of S.I. SiC substrate was over 15% 2018 Named the National IP Leading Company 2017 First Prize of Jinan Science and Technology Progress 2015 The new headquarter plant construction completed and operation started 2014 First Prize of Shandong Provincial Technology Invention 2010 Founded with the registered capital of 60 million RMB Product ConsultationYou can contact us through the following ways, or put forward your requirements online Contact：Sales Department Tel：0531-85978212Fax：0531-85978212 E-mail：sales@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. Online input InvestorsContact：Board of Directors OfficeTel：0531-69900616 Fax：0531-85978212 E-mail：dmo@sicc.cc Address：No.99 South Tianyue Road, Huaiyin District, Jinan, Shandong. 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